Method of manufacturing vacuum plasma treated workpieces and system for vacuum plasma treating workpieces

ABSTRACT

A method of manufacturing vacuum plasma treated workpieces includes the steps of introducing at least one workpiece to be treated into a vacuum chamber; treating the workpiece in the vacuum chamber, thereby establishing a plasma discharge in the vacuum chamber by a supply signal with maximum energy at a first frequency which is at least in the Hf frequency range; removing the workpiece treated from the vacuum chamber; performing a cleaning inside the vacuum chamber, thereby establishing the plasma discharge by a supply signal with maximum energy at a second frequency higher than the Hf frequency; and repeating these steps at least one time. A system for vacuum plasma treating workpieces includes an evacuatable vacuum recipient. A gas inlet arrangement in the vacuum recipient is connectable to a first gas supply and to a second gas supply. A plasma generating arrangement in the recipient has an electric input to an electrode. A generator arrangement with a first and with a second output generates at the first output an output signal having maximum energy at a first frequency being at least in the Hf frequency range. The generator arrangement generates at the second output a signal with a maximum energy at a second frequency which is higher than the first frequency. A control unit alternatively operationally connects the first output of the generator arrangement to the electric input and the first gas supply to the gas inlet or the second output of the generator arrangement to the electric input and the second gas supply to the gas inlet.

The present invention refers generically to methods and systems forvacuum plasma treating workpieces of that kind where after treating oneor more than one workpiece simultaneously or subsequently in a vacuumrecipient, the vacuum recipient must be cleaned before proceeding tofurther treatments therein.

Thereby, treatment as addressed by the present invention is of that kindwhere a plasma is applied which is supplied by a supply signal havingmaximum energy at a frequency which is in the high frequency range.

We define: High frequency range:  3 to 30 MHZ Very high frequency range(VHF): 30 to 300 MHz

Overall cycle time and thus throughput of such methods and systems issignificantly governed by the cycle time of the treatment and the cycletime of the cleaning. This is clearly especially true if after eachtreatment cycle a cleaning cycle is performed. The overall cycle timemay be shortened—according to an increased throughput—by shortening thetreatment cycle for establishing a desired treatment result. Thisaccords with rising the treatment efficiency during the treatment cycle.It is known that treatment efficiency of treatment processes which makeuse of high frequency plasma may be risen by increasing the treatmentplasma frequency. It is e.g. known that in plasma enhanced chemicalvapor deposition treatment processes making use of high frequencyplasma—P_(Hf)ECVD—the deposition rate may be risen by rising the plasmafrequency, thereby shortening the treatment cycle.

It is also known that when rising the frequency of a high frequencyplasma used for workpiece treatment up to and into the VHF frequencyrange this may cause problems with respect to the uniformity of thetreatment effect along a workpiece surface, especially if such surfaceis large, which is e.g. often true for such _(Hf)PECVD treatment, as formanufacturing flat panel displays, semiconductor devices, solar cellworkpieces or workpieces with photosensitive film. These problems ofuniform treatment effect at very high treatment plasma frequencies havebeen addressed and are resolved, e.g. as described in the U.S. Pat. No.6,228,438, by a special electrode conception. Thus, and with an eye onthe treatment cycle, decreasing cycle time by increasing the plasmafrequency is known and the accompanying problems especially with respectto treatment homogeneity or uniformity are solved.

Nevertheless, and as was addressed above, the overall cycle and thus thethroughput are also governed by the cleaning cycle time for cleaning thevacuum recipient, wherein treatment of the workpieces has been and isperformed.

Shortening the cleaning cycle time in treatment processes of the type asaddressed by the present invention is a topic which is dealt with in theU.S. Pat. No. 6,410,102. Thereby, it is proposed to decrease thecleaning time by a dry etching technique using a plasma with a frequencywhich is lower than the frequency of the plasma used for workpiecetreatment.

In the U.S. Pat. No. 6,410,102 there is reported a non-uniform dryetching effect when rising the plasma frequency for dry etching abovethe VHF band of 50 MHz or more, leading to inaccurate cleaning of thevacuum recipient. The treatment plasma is operated in the VHF band orabove.

It is an object of the present invention to shorten the cleaning cyclerelative to the treatment cycle time in a treatment/cleaning system ormanufacturing method as mentioned. This is realized according to thepresent invention by a method of manufacturing vacuum plasma treatedworkpieces which comprises the steps of

-   (a) introducing at least one workpiece to be treated into a vacuum    recipient;-   (b) treating the workpiece in the vacuum chamber, thereby    establishing a plasma discharge in the vacuum chamber by a supply    signal with maximum energy at a first frequency which is at least in    the Hf frequency range;-   (c) removing the workpiece treated from the vacuum recipient;-   (d) performing a cleaning inside the vacuum recipient, thereby    establishing a plasma discharge by a supply signal with maximum    energy at a second frequency which is higher than the addressed    first frequency, and-   (e) repeating the steps (a) to (d) at least one time.

The inventors of the present invention have recognized that whenever thecycle time for treating the workpieces is shortened by establishing thefrequency of the treatment plasma in the Hf-range, the respectivelygained advantage with respect to throughput may be attenuated byaccordingly shortening the cleaning cycle time in that the frequency ofthe cleaning plasma is accordingly risen or maintained above thefrequency of the treatment plasma.

If for shortening the treatment cycle time by increasing treatmentplasma frequency special electrode conceptions have to be applied—forresolving the treatment homogeneity problem, then these measures willalso counteract inhomogeneous cleaning at an accordingly high frequencyof the cleaning plasma.

Further, the inventors have recognized that by rising the frequency ofthe cleaning plasma and keeping it well above the high frequency of thetreatment plasma, it becomes possible to apply increased cleaning plasmapower, thereby additionally preventing inaccurate cleaning andshortening the cleaning cycle time.

By maintaining the frequency of the cleaning plasma well above the highfrequency of the treatment plasma during cleaning the ion bombardment ofthe chamber walls and the electrode which may lead to sputtering isreduced. This allows to significantly increase plasma power. Byincreasing or keeping the frequency of the cleaning plasma well abovethe high frequency of the treatment plasma the sheath voltage in frontof the inner surface of the electrodes and thus also of the innersurface of the recipient acting as electrode is drastically reducedwhich reduces the energy of ions bombarding such electrode surfaces.Therefore, much higher power may be applied which overcompensates apossible unevenness of cleaning effect along the recipient wall, beforea critical power is reached at which surface sputtering becomesapparent.

In one embodiment of the method according to the present invention thesteps of introducing (a) up to and including removing (c) are repeatedat least one time before a subsequent cleaning step (d) is performed.This means that the vacuum recipient may first be used for respectivelytreating at least one workpiece in at least two subsequent treatmentcycles or even more before a cleaning cycle is established.

For more critical workpiece treatment and as a further embodiment aftereach treatment and removing cycle a cleaning cycle is performed which isestablished by directly proceeding from removing step (c) to cleaningstep (d).

In a further embodiment during the cleaning step (d) a total pressure inthe vacuum recipient is established, p_(tot), for which there is valid0.2 mbar≦p_(tot)≦0.6 mbar.

Thereby, relatively long mean free paths of the plasma activated gasradicals are established during cleaning. This leads to efficientcleaning even in small holes and gaps. In spite of the fact that lowpressures rather lead to limitation of the cleaning rate and toincreased ion energy bombarding the inside surfaces, it is due to thefact that the cleaning plasma frequency is kept well above the highfrequency of the treatment plasma, that these effects areovercompensated.

In a further embodiment of the method according to the present inventionduring the cleaning step a fluorine containing gas is applied into thevacuum recipient.

In a further embodiment at least one of SF₆ and of NF₃ is applied.

In one embodiment the addressed first frequency, the frequency of thetreatment plasma, f₁, is selected to be:10 MHz≦f₁≦30 MHz.

In a further embodiment the addressed first frequency f₁ is selected tobe about 13.56 MHz.

In a further embodiment the second frequency f₂ according to thecleaning plasma frequency is selected to be a harmonic of the firstfrequency f₁.

In a still further embodiment the second frequency f₂ is selected in theVHF frequency range.

Still in a further embodiment it is the first frequency f₁ which isselected in the VHF frequency range.

Still in a further embodiment the second frequency f₂ is selected:30 MHz≦f₂≦100 MHz.

Still in a further embodiment the second frequency f₂ is selected to beapprox. 40 MHz.

Still in a further embodiment the second frequency f₂ too is selected inthe high frequency range. Thereby, still in a further embodiment f₂ isselected20 MHz≦f₂≦30 MHz.

Still in a further embodiment f₂ is selected to be about 27 MHz, whichis about the first harmonic of f₁ selected to be about 13.56 MHz, asselecting f₂ to be about 40 MHz accords to the second harmonic of thatf₁.

In a further embodiment the second frequency f₂ is selected to be atleast double the first frequency f₁.

In a further embodiment of the method according to the present inventionworkpiece surfaces are treated which are at least 2000 cm².

Still in a further embodiment during the treatment step (b) a SiNcoating is deposited on the workpiece.

Still in a further embodiment during the treatment step (b) there isperformed at least one of PVD and PECVD and in a still furtherembodiment such treating step (b) consists of a PECVD treatment.

Still in a further embodiment of the method according to the presentinvention flat workpieces are produced, in a further embodiment flatpanel display workpieces, i.e. workpieces which are used for flat paneldisplay manufacturing.

Still in a further embodiment solar cell workpieces are manufactured orworkpieces with photosensitive film or workpieces for semiconductorworkpieces.

According to the present invention there is further proposed a systemfor vacuum plasma treating workpieces which comprises

-   -   an evacuatable vacuum recipient;    -   a gas inlet arrangement in the recipient connectable to a first        gas supply and to a second gas supply;    -   a plasma generating arrangement in the recipient with an        electric input to an electrode;    -   a generator arrangement with a first and a second output and        generating at the first output a signal with maximum power at a        first frequency which is in the high frequency range and at the        second output a signal with maximum power at a second frequency        which is higher than the first frequency;    -   a control unit which alternatively operationally connects the        first output of the generator arrangement to the electric input        of the plasma generating arrangement in the recipient and the        first gas supply to the gas inlet or which connects the second        output of the generator arrangement to the electric input and        the second gas supply to the gas inlet.

The invention shall now be described with the help of figures and bymeans of examples.

The figures show:

FIG. 1 schematically, a first embodiment of the system according to thepresent invention and performing the manufacturing method according tothe present invention;

FIG. 2 a part of the inventive system as of FIG. 1 in a further variant;

FIG. 3 a representation of cleaning rate (Å/s) vs. Rf power (w) whenperforming cleaning according to the manufacturing method and with asystem according to the present invention at cleaning plasma frequenciesabove treatment plasma frequency, and

FIG. 4 a representation of sputter-critical plasma power vs. plasmafrequency in the system and method according to the present invention.

In FIG. 1 there is schematically shown a first embodiment of a systemaccording to the present invention performing the manufacturing methodaccording to this invention.

A vacuum recipient 1 has an input loadlock 3 and an output loadlock 5.Workpieces as flat substrates 7, especially for manufacturing flat paneldisplays or solar cells or substrates with photosensitive films,especially with large surfaces to be treated of at least 2000 cm² areinput by input loadlock 3 and deposited on a substrate-receiving surface7 a. According to FIG. 1 bottom surface of the recipient 1 is used assubstrate receiving surface 7 a. After treatment the substrate 7 isunloaded via output loadlock 5. Instead of a single workpiece, in someapplications, batches of more than one workpiece may be simultaneouslyfed to the vacuum recipient 1. Within vacuum recipient 1 and opposite tothe workpiece-receiving surface 7 a—here acting as one electrode—thereis provided a second electrode arrangement 9 connected to an electricinput E₁ at the recipient 1 via an isolating feed-through 11 through thewall of recipient 1.

The electric input E₁, according to the embodiment of FIG. 1, isoperationally connected to an output A₁₃ of a matchbox arrangement 13,the input E₁₃ of which being operationally connectable either to a firstoutput A_(Hf) or to a second output A_(Hf+) of a generator arrangement15. The generator arrangement 15 generates as by a generator stage 15_(Hf) at output A_(Hf) a signal with maximum energy at a frequency f₁which is in the high frequency range. The arrangement 15 furthergenerates at output A_(Hf+) an electric signal with maximum energy at afrequency f₂ which is higher than frequency f₁. As schematically shownby the controlled switching unit 17, electrode 9 is either operationallyconnected to output A_(Hf) or to output A_(Hf+).

The switching unit 17 has a control input C₁₇.

The electrode arrangement 9 as well as the workpiece support surface 7 amay be shaped according to the specific needs, e.g. so as to deal withhigh frequency plasma caused inhomogeneous treatment effect on thesubstrate surface as e.g. shown in the U.S. Pat. No. 6,228,438.

The vacuum recipient 1 has further a gas inlet 19 which isflow-connected via a controlled flow switching unit 21 either to a gassupply G1 or to a gas supply G2. The flow switching unit 21 has acontrol input C₂₁.

The switching unit 17 as well as the flow switching unit 21 arecontrolled via their respective control inputs C₁₇ and C₂₁ by a processcycle control unit 23. Further, it has to be noted that in spite of thefact that in FIG. 1 there is provided one matchbox arrangement 13 andthe wall of the recipient 1 is shown to be connected on a referencepotential, e.g. on ground potential, it is also possible to apply highfrequency electric voltage between electrode arrangement 9 and substratesupport surface 7 a differently, as by connecting the wall of recipient1 via a second matchbox arrangement on a reference potential or even byfeeding Rf energy via a matchbox arrangement to recipient 1.Nevertheless, it will be more customary to tighten recipient 1 as shownto a reference potential. Once a substrate 7 has been introduced intorecipient 1 a high-frequency plasma-assisted treatment is performedthereon. To do so, control unit 23 operates switching unit 17 to supplyelectrode arrangement 9 with electric energy from output A_(Hf) ofgenerator arrangement 15. The high frequency plasma assisted treatmentmay be a reactive or a non-reactive PVD treatment, but is in ahigh-frequency plasma-enhanced CVD treatment. Thus, especially for suchtreatment, a treatment gas, possibly with an operating gas as e.g.Argon, is fed via inlet 19 from gas supply G₁ into recipient 1. This iscontrolled by unit 23 and flow control unit 21.

As soon as the high frequency plasma treatment of the substrate 7 isterminated, the yet treated substrate is removed from recipient 1 viaoutput loadlock 5. Subsequently, the inside of recipient 1 has to becleaned from contamination depositions which are due to substratetreatment as from film deposition or etching during the high-frequencyplasma-assisted treatment.

The subsequent cleaning cycle is performed directly after each treatmentcycle of workpieces or, in less critical applications, after apredetermined number of treatment cycles having been performed.

For the cleaning cycle electrode 9 is electrically operationallyconnected to output A_(Hf+) of generator arrangement 15, controlled bycontrol unit 23 and switching unit 17. Simultaneously and in most casesthe gas applied to recipient 1 via gas inlet 19 is switched by controlunit 23 and flow control unit 21 to the second gas supply G₂. Forcleaning purposes this gas supply G₂ may contain fluorine, thereby SF₆and/or NF₃. Possibly also oxygen is contained in gas supply G₂. As thesignal generated by the generator arrangement 15 at output A_(Hf+) has afrequency f₂ which is higher than the frequency f₁ generated at outputA_(HF), the cleaning cycle plasma is supplied by a supply signal havingmaximum energy at a higher frequency than during the treatment cycle.

We refer to the frequency of “maximum energy” taking into account thatthe output signals of generator arrangement 15 need not be sinusoidal,and will normally provide for an accordingly distributed frequencyspectrum characterized by maximum energy at a specific spectralfrequency.

With respect to specific embodiments how to operate and construe thesystem according to FIG. 1 we refer to the introductory part and thespecific embodiments addressed therein.

If the two frequencies f₁ and f₂ are spectrally too wide apart from eachothers, it might become difficult to tailor matchbox arrangement 13 tobe good enough for both frequencies. Then either the matchboxarrangement 13 is also controlled for adaptation to the respectivefrequency f₁ and f₂ as shown in dashed lines in FIG. 1 or, according toFIG. 2, the matchbox arrangement comprises two separate matchboxes 13_(Hf) and 13 _(HF+), which become enabled together with the respectivesupply.

EXAMPLES

Glass substrates with a surface to be treated of 410×520 mm² were coatedin respective treatment steps in a system according to FIG. 1 with a SiNlayer, thereby selecting treatment plasma frequency f₁=13.56 MHz. Thenthe substrates were removed from recipient 1.

After the respective coating a subsequent cleaning step was performedwith SF₆ and O₂ inlet into the recipient 1 from gas supply G₂ as ofFIG. 1. The gas flow was as follows for all examples: SF₆: 500 sccm O₂:100 sccm

The total pressure p_(tot) in recipient 1 during all the cleaning cycleswas 0.4 mbar.

First, cleaning from SiN was performed at a frequency f₂=13.56 MHz andat a power applied of about 500 W. This power of 500 W was about thelimit power P_(crit) before starting damaging the electrode due to ionbombardment and resulting electrode sputtering.

Then f₂ was risen respectively to f₂=27 MHz and to f₂=40 MHz. At thesefrequencies f₂ the Rf power was varied. The results are shown in FIG. 3.The course (a) shows the dependency of cleaning rate in Å/s from Rfpower in W at f₂=27 MHz, course (b) at 40 MHz. It was recognized thatwith rising frequency f₂ of the cleaning plasma, the Rf power as appliedmay also be considerable without reaching P_(crit).

It was found that the critical power P_(crit) in dependency of f₂ has acourse as approximately shown in FIG. 4.

Therefrom, it might be seen that with rising frequency f₂ the plasmapower may also be risen substantially without reaching P_(crit) andincurring the risk of sputtering the electrode and the wall surfaces.

Thus, it becomes possible to combine shortening treatment cycles time byrising the frequency of the treatment plasma and simultaneously toshorten the treatment cycle time by keeping the frequency of thecleaning plasma still higher than the frequency of the treatment plasma,thereby even rising the power of the cleaning plasma. Thus, the overallcycle time is substantially shortened and accordingly throughput ofworkpieces through the system according to the present invention and therespective method for manufacturing is substantially increased.

In the following table the rates of reactor cleaning performed atfrequency values for f₂ of 13.56 MHz and of 27 MHz are shown. Cleaningis performed with SF₆/O₂. Thereby, a contamination layer in the reactorof SiN and of amorphous silicon deposited at low deposition rates,a-Si-LDR, is removed. For both frequency values the Rf power applied wasjust below P_(crit) where surface sputtering of electrode surfaces andrecipient wall surfaces starts. It may be seen that at f₂=27 MHzconsiderably higher cleaning rates are realized due to higher powerwhich is applicable. Frequency SF6/O2 Pressure RF Cleaning rate Process(MHz) (sccm) (mBar) (W) (Å/s) SiN 13.56 500/100 0.4 500 17.5 27 500/1000.4 875 24 a-Si-LDR 13.56 500/100 0.4 500 13 27 500/100 0.4 875 22.5

1. A method of manufacturing vacuum plasma treated workpieces comprisingthe steps of (a) introducing at least one workpiece to be treated into avacuum chamber; (b) treating said workpiece in said vacuum chamber,thereby establishing a plasma discharge in said vacuum chamber by asupply signal with maximum energy at a first frequency which is at leastin the Hf frequency range; (c) removing said workpiece treated from saidvacuum chamber; (d) performing a cleaning inside said vacuum chamber,thereby establishing said plasma discharge by a supply signal withmaximum energy at a second frequency higher than said Hf frequency; (e)repeating steps (a) to (d) at least one time.
 2. The method of claim 1,further comprising repeating said introducing step (a) up to anincluding said removing step (c) at least one time before proceeding tosaid cleaning step (d).
 3. The method of claim 1, further comprisingdirectly transiting from said removing step (c) to said cleaning step(d).
 4. The method of one of claims 1 to 3, further comprisingestablishing during said cleaning step (d) a total pressure in saidvacuum chamber p_(tot) for which there is valid:0.2 mbar≦p_(tot)≦0.6 mbar.
 5. The method of one of claims 1 to 4,further comprising providing during said cleaning step (d) a fluorinecontaining gas in said vacuum recipient.
 6. The method of one of claims1 to 5, further comprising providing at least one of SF₆ and of NF₃ insaid vacuum recipient during said cleaning step (d).
 7. The method ofone of claims 1 to 6, further comprising selecting said first frequencyf₁ to be10 MHz≦f₁≦30 MHz.
 8. The method of claim 7, further comprising selectingsaid first frequency f₁ to be about 13.56 MHz.
 9. The method of one ofclaims 1 to 8, further comprising selecting said second frequency to bea harmonic of said first frequency.
 10. The method of one of claims 1 to9, further comprising selecting said second frequency in the VHF range.11. The method of one of claims 1 to 10, further selecting said firstfrequency in the VHF range.
 12. The method of one of claims 1 to 11,further comprising selecting said second frequency f₂:30 MHz≦f₂≦100 MHZ.
 13. The method of one of claims 1 to 12, furthercomprising selecting said second frequency to be about 40 MHz.
 14. Themethod of one of claims 1 to 9, further comprising selecting said secondfrequency f₂ in the high frequency range.
 15. The method of one ofclaims 1 to 9, further comprising selecting said second frequency f₂ tobe20 MHz≦f₂≦30 MHZ.
 16. The method of one of claims 1 to 9, furthercomprising selecting said second frequency f₂ to be about 27 MHz. 17.The method of one of claims 1 to 16, further comprising selecting saidsecond frequency f₂ at least double said first frequency f₁.
 18. Themethod of one of claims 1 to 17, thereby manufacturing workpieces with atreated surface larger than 2000 cm².
 19. The method of one of claims 1to 18, said treating comprising coating with SiN.
 20. The method of oneof claims 1 to 19, wherein said treating comprises at least one ofphysical vapor deposition—PVD—and of plasma enhanced chemical vapordeposition—PECVD.
 21. The method of one of claims 1 to 20, wherein saidtreating is plasma enhanced chemical vapor deposition PECVD.
 22. Themethod of one of claims 1 to 21, wherein said workpieces are flatworkpieces.
 23. The method of one of claims 1 to 22, wherein saidworkpieces are workpieces for flat panel displays.
 24. The method of oneof claims 1 to 22, wherein said workpieces are solar cell workpieces.25. The method of one of claims 1 to 22, wherein said workpieces areworkpieces with a photosensitive film.
 26. The method of one of claims 1to 22, wherein said workpieces are workpieces for semiconductorworkpieces.
 27. The method of one of claims 1 to 26, further comprisinggenerating said supply signal with said first frequency by a firstgenerator and generating said supply signal with said second frequencyby a second generator and applying both said supply signals to commonelectrodes in said vacuum recipient via a common matchbox arrangement orvia respective first and second matchboxes arrangements.
 28. A systemfor vacuum plasma treating workpieces comprising: an evacuatable vacuumrecipient; a gas inlet arrangement in said vacuum recipient andconnectable to a first gas supply and to a second gas supply; a plasmagenerating arrangement in said recipient with an electric input to anelectrode; a generator arrangement with a first and with a second outputand generating at said first output an output signal having maximumenergy at a first frequency being at least in the Hf frequency range andgenerating at said second output a signal with a maximum energy at asecond frequency which is higher than said first frequency; a controlunit alternatively operationally connecting said first output of saidgenerator arrangement to said electric input and said first gas supplyto said gas inlet or said second output of said generator arrangement tosaid electric input and said second gas supply to said gas inlet.